Download Advances in Electronics and Electron Physics, Vol. 72 by Peter W. Hawkes (Ed.) PDF

By Peter W. Hawkes (Ed.)

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The binding energies of acceptors in GaAs-Ga,,,AI,,,As quantum wells are plotted versus the GaAs slab thickness. , 1983, 1985. 4 -14 -16 1 40 60 80 100 1 2 0 Number or GaAs Monolayerr 20 FIG. 29. The binding energies on-center donors in GaAs-Ga, _,AI,As is plotted versus the GaAs slab thickness. 83 A thick. , 1982. Al,As quantum wells. At low field, the “1S” donor state exhibits a quadratic Zeeman shift while at large field it approaches from below the energy of the n = 0 Landau level. Excited “2P*” states can be analyzed in a similar fashion: the “2P+”(“2P-”) states approach the n = 1 (n = 0) Landau levels at large field.

Owing to this parity property, to the fact that we have neglected the inversionasymmetry splitting of bulk materials and to the assumed zero magnetic field, each allowed energy in Eq. (62) is twice degenerate (Kramers degeneracy). We shall see below that non-centro-symmetric band edge profiles combine with non-vanishing spin-orbit coupling to induce a sizeable lifting of the Kramers degeneracy for r,-related states at finite k l . , 1984). This is due to the S-like symmetry of the periodic parts of the Bloch functions.

In Eqs. (60-62) propagating waves have been assumed to exist in both kinds of layers. In the case of evanescent propagation in the B layer kB should be replaced by kBin Eqs. (61,62). It may be pointed out that Eq. (62) is not simply obtained from Eqs. Instead, the superlattice in-plane dispersion relations contain an explicit k,-dependent contribution, which originates from the hosts’ non-parabolicity. Since there is an effective mass mismatch between the A and B materials the apparent band offset V, for the z motion becomes implicitly k,-dependent.

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